GROWTH OF SEMICONDUCTOR COMPOUNDS

摘要

Semiconductor compounds which are alloys of group III-V compounds are grown by a liquid phase epitaxy method which includes heating growth apparatus in a reducing atmosphere whilst maintaining a solvent for the compound, a source of the group III-V compound and another element of the alloy separate from each other. After heating to reduce oxides, the element is added to the solvent, the source is brought into contact with the solvent and the resulting solution is brought into contact with a substrate to effect growth of the compound. Apparatus for carrying out the method is also described.