| 摘要 |
PURPOSE:To reduce the defective in a second wiring and to improve yield by a method wherein a substrate exposed section among a lift-off SiO2 film, an electrode and a first wiring is composed by filling a silica film to improve the coating property of an interlayer insulating film. CONSTITUTION:Structure shown in drawing (a) is obtained by applying a well known insulating film covering and coating method, an ion implantation method and a lift-off method or the like. Next, a liquid silica film solution is dropped on the said substrate 11 and a silica film 20' is applied to the subtrate 11. In this process, the silica film 20' is applied on the substrate 11 dropping the solution then sucked to a spinner and by rotating a rotary head at high speed. Next, thermal treatment at about 200 deg.C is applied and a solvent is evaporated to form a silicon oxide 20. Next, while maintaining the temperature of the substrate 11 at about 350 deg.C, an SiO2 film 15 is covered and coated as a layer insulating film by a CVD method. |
