| 摘要 |
PURPOSE:To obtain a semiconductor laser whereof the threshold current is low, the favorable light emitting characteristic can be obtained, and manufacturing yield is favorable. CONSTITUTION:An insulating film 12 consisting of S1O2,S1N having film thickness of 1,000-3,000Angstrom and having an opening 13 is formed on one main face of an N type GaAs substrate 11, the first clad layer 14 consisting of N type Ga0.64Al0.36As having layer thickness of about 1mu is formed on the insulating film 12 thereof and on the substrate 11 exposed from the opening 13, an active layer 15 consisting of the same type Ga0.94Al0.64As having layer thickness of about 0.2mu is formed thereon, the second clad layer 16 consisting of P type Ga0.64Al0.36As having layer thickness of about 1mu is formed on the layer 15 thereof, and a cap layer 17 consisting of P type GaAs having layer thickness of about 0.5mu is formed on the layer 16 thereof. The layer grown on the opening 13 of the insulating film 12 mentioned above becomes as a single crystal layer 18, and a laser beam is oscillated at the active layer 15 in the single crystal layer 18 thereof. |
