| 摘要 |
PURPOSE:To obtain a photosensitive element with superior resistance in all environmental conditions, high photosensitivity and a wide range of spectral sensitivity by forming an intermediate layer of amorphous silicon (a-Si) containing N and H, an a-Si photoconductive layer and an upper layer successively on a conductive supporting member. CONSTITUTION:A non-photoconductive a-Si layer 202 containing 25-55atom% N and 2-50atom% H is formed on a conductive supporting member 201 so as to form an intermediate layer with the thickness of 30-1,000Angstrom . Subsequently, a photoconductive layer 203 obtained by adding suitable donor and acceptor to p type, n type or i type a-Si selected according to a purpose is formed with the thickness of 1-100mu on the layer 202 by a-Si:H vapor deposition. If necessary, an upper layer 205 consisting of an a-Si layer with the same composition as the intermediate layer 202, an inorganic insulating member such as Al2O3 or an organic insulating material such as polyester is formed on the layer 203. By said configuration, a picture of high quality with high resolution and clear half tone is obtained. |
