| 摘要 |
PURPOSE:To prevent the separation of an electrode caused by the heat generated in an element by a method wherein the electrode lead out section of a semiconductor layer is coated with a Cr silicide which is an alloy layer of the semiconductor and Cr, then with a Cr layer and, further, with an intermediate metal lamination consisting of a Ti layer and a Pt layer. CONSTITUTION:A base region 2 is diffusedly formed in a collector region 3 and an emitter region 1 is provided in the base region 2. The entire surface is covered with a thermally oxidized film 4, and then a washed emitter window 1' and a base window 2' are opened respectively. Next, the entire surface is coated with a Cr layer 7 which is treated into a Cr silicide alloy layer. The Cr silicide, other than the layers 5 and 6 respectively located on the windows 1' and 2', is removed. The entire surface including them is covered with a Ti layer 8 and then with a Pt layer 9. After this, using the lift away method, unnecessary metal sections are removed, with the electrode patterned parts of the Ti layer 8 and Pt layer 9 surviving the treatment. Bathing in Au follows for an Au coating 10 to be deposited on the Pt layer 9 to serve as an electrode. |
