| 摘要 |
<p>PURPOSE:To perform writing using small current and enable rewriting, by making writing by short-circuit due to discharge through a pin hole and making rewriting by disconnecting short-circuit through the pin hole. CONSTITUTION:Pulse voltage is applied between an Al wiring 8 and an anode electrode 11 through an n<+> type burried layer 3 and a diode D3 to cause dielectric breakdown of an interlayer insulating film 13 right under a pin hole 14. Then, an Al connection film 15 is formed by migration of Al from wiring 8 and the electrode 11 caused by the above. Writing is performed by short circuit between the wiring 8 and the electrode 11 caused thereby. To rewrite data, pulse current is flowed between the wiring 8 and the electrode 11 through the layer 3 and the diode D3. Rewriting is made only once by disconnecting the wiring 8 around the connecting film 15. Accordingly, pulse voltage of small current can be used and the size of the memory cell can be made small.</p> |
