| 摘要 |
PURPOSE:To make the detection of fine particles and microdefects with laser beam very effective by adding a dye absorbing light having the proper wavelength of laser beam to a resist film beforehand. CONSTITUTION:In case of pattern inspection with He-Ne laser beam, since the wavelength is 6328Angstrom , a resist film pattern 3 contg. a dye such as direct dark green B, direct green B or direct green G as a dye absorbing light having said wavelength is formed. When laser beam is irradiated, most of it is absorbed, only laser beam II is reflected from the surface of the pattern 3, and the reflected beam differs remarkably from beamI reflected from a wafer 1. In case of He-Cd laser beam, since the wavlength is 4,400Angstrom , a resist film contg. auramine G conc. or auramine conc. is formed. |
