| 摘要 |
A P-conductivity type resistor layer 12 is formed in the main surface of a silicon substrate 11, and extends along a crystal axis of [001] where the main surface is a crystal face of (110), or else it extends along a [010] or [001] axis in the case of a (100) face main surface. It has been found that the resistance value of a P-conductivity type resistor layer of such orientation is less affected than other orientations in the same plane by the thermal stresses induced in the layer by the shrinkage of a plastics resin envelope 18 during the moulding thereof. <IMAGE> |
