| 发明名称 |
Method for fabricating semiconductor devices with dual gate oxides |
| 摘要 |
A dual gate oxides' process for mixed-mode IC is provided. More particularly, the present invention relates to a dual gate oxides' process for mixed-mode IC, which protects and improves the dual gate oxides' quality.
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| 申请公布号 |
US6346445(B1) |
申请公布日期 |
2002.02.12 |
| 申请号 |
US20000715826 |
申请日期 |
2000.11.17 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HSU SHIH-YING |
| 分类号 |
H01L21/762;H01L21/8234;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/762 |
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