| 摘要 |
PURPOSE:To prevent increase of the manufacturing process, and to prevent reduction of the quality of manufactured goods and yield of manufactured goods of semiconductor device by a method wherein the base regions of the plural number having respectively different impurity concentration and depth are enabled to form by one time introduction of impurities. CONSTITUTION:The some parts of the regions to form a transistor 31 and an I<2>L 32 of an N type semiconductor substrate 35 are exposed, and impurities are introduced by B<+> ion implantation. Then the parts excluding the part to form the collector region of the I<2>L are covered with silicon nitride films 52 as the insulating film, and the heat treatment is performed in an oxidizing atmosphere to form silicon oxide film 53. The regions having respectively different impurity concentration and depth, namely the base region 36 of the transistor 31, the base region 42 of the I<2>L, and the injector region 43 are formed by performing forced diffusion in an inert atmosphere. |
