| 摘要 |
PURPOSE:To contrive to enhance integration of a field effect transistor by a method wherein contact holes for taking out of P<+> type conductive base regions, a source electrode and base electrodes, etc., are formed in a dot type to the grade as not to damage the electric characteristic by increase of resistance of the base regions. CONSTITUTION:The base regions 17 being the reverse conductive type to a substrate and the source regions 18 being the reverse conductive type thereto are provided in the semiconductor substrate 23. Gate electrodes 14 are provided interposing an insulating film 25 between them, and the source electrode 15 is provided coming in contact with the regions 17, 18 through the contact hole 26. A drain electrode 16 is provided on the other face. Because the P<+> type conductive base region 19 and the contact holes 26 are provided in a dot type, the part of the region h is not needed to occupy broad width like the part of the region i, and because the whole can be formed narrow, high integration can be attained. |
