| 摘要 |
PURPOSE:To obtain a lower electrode, hirock thereof is small and which is hardly damaged through a lift-off process, by forming a layer insulating film and a window for relaxing stress. CONSTITUTION:The layer insulating film 3 is shaped onto the lower electrode 2 through the lift-off method. The window 6 for relaxing stress is formed to the film 3 at that time, and the section except the peripheral section of the electrode 2 is exposed. An upper electrode 4 is shaped through the lift-off method, and contacted with the electrode 2 in a tunnel junction sectio 5. Accordingly, the hillock to the junction section 5 is headly generated, and defects due to the damage of the electrode 2 are largely decreased. |
