| 摘要 |
PURPOSE:To reduce the generation of bird beaks or heads, by forming an Si single crystal layer up to the height over an SiO2 film on the exposed part of a single crystal Si substrate later to shave up to the height of the SiO2 film. CONSTITUTION:The single crystal Si substrate 1 is thermal-oxidized to form the SiO2 film 2. The SiO2 film 2 is selectively etched by plasma sputter etching with small side cut action. N type impurity is introduced into the exposed Si substrate 1 by thermal diffusion method to form an N type region 3. The N type Si single crystalline layer 4 is formed thicker than the SiO2 film on the Si substrate 1 by vapor epitaxial growing method. Polishing is performed until the SiO2 film 2 exposes to remove a part of the polycrystalline Si layer 5 and Si single crystalline layer 4. The surface part of the exposed Si single crystalline layer 4 is oxidized by thermal oxidization treatment to form an SiO2 film 6 as an insulating layer. |
