发明名称 LOW ELECTRIC POWER STATIC RAM
摘要 PURPOSE:To obtain an RAM of low power consumption, by driving a memory cell only when the writing or reading is carried out via a clock signal supplying means containing a prescribed gate circuit, etc. CONSTITUTION:An AND gate 1 of a signal supplying means CLS is opened by the writing or reading instruction signal through an OR gate 2. Thus a clock pulse phi is supplied to a clock signal line CL. Thus a memory cell D11 is driven via a bit line charge-up means BC only in the writing or reading mode and not driven in the stand-by mode. As a result, the power consumption is reduced for a static RAM.
申请公布号 JPS581883(A) 申请公布日期 1983.01.07
申请号 JP19810097397 申请日期 1981.06.25
申请人 FUJITSU KK 发明人 TAKAHASHI HITOSHI
分类号 G11C11/41;G11C7/12 主分类号 G11C11/41
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