发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To secure connection, by a method wherein smaller-diameter parts are provided at stud inner end surface portions, and the effective length of contraction of glass is made greater to increase the force of contraction of a glass pipe, thereby increasing the contact pressure between an element disposed between the stud end surfaces and the studs. CONSTITUTION:Smaller-diameter parts 5, 5' are made at the end surfaces of respective studs 2, the height thereof being l1, l2. Sealing is carried out at 700-800 deg.C, and then gradual cooling is effected. Hardening of the glass, i.e., contraction begins at nearly 400 deg.C. At this time, the contraction length is DELTAt2= alphaGXTXt2-alphaD(l1+l2)XT. If l1=l2= 0.25mm., the expansion coefficient of glass alphaG=9X 10<-6>,the expansion coefficient of the studs alphaD=5.7X10<-6> and T=400 deg.C, DELTAt2=1.6mum is obtained. In this constitution, there is an increase in the contrction length of about 0.7mum because l1=l2=0.25mum=the thickness of the diode. Corresponding to this, the pressure to the diode increases, so that generation of imcomplete connection in the course of production and during its use is prevented and reliability is improved.
申请公布号 JPS58161(A) 申请公布日期 1983.01.05
申请号 JP19810098572 申请日期 1981.06.25
申请人 FUJITSU KK 发明人 SANO YOSHIAKI;YAGI MUTSUO
分类号 H01L23/48;H01L21/50 主分类号 H01L23/48
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