| 摘要 |
PURPOSE:To miniaturize a hybrid thyristor for reduction in size and weight of an application circuit device using the miniaturized version by a method wherein a main thyristor and an auxiliary thyristor are formed in a single semiconductor substrate. CONSTITUTION:A P type isolating region 31 is diffusedly formed in the central portion on a side of an N type Si substrate 30. The whole of said surface of the substrate 30 is covered with a diffusedly formed P type layer 31 and the other side is covered with a diffusedly formed P type layer 33 wherein an N type layer 34 is formed, for the building of a PNPN four layer structure. Next, a groove is provided reaching the region 31 from the central portion of the layer 33. The groove is then coated with a glass passivation film 39. The groove and the region 31 divide the substrate 30 into two sections each of which is again provided with grooves 41 reaching the substrate 30 from the both sides to be respectively coated with glass films 38. One of the two sections is used as the primary thyristor and the other as the auxiliary thyristor. |
