| 摘要 |
PURPOSE:To reduce the device in the lateral direction, by using a silicon nitride film as an oxidation resisting film against the formation of a pattern oxide film in addition to a second polycrystalline silicon film, and forming the high- concentration deep emitter region of a substrate PNP transistor directly beneath the lead-out port of an electrode. CONSTITUTION:A base region 10a of an NPN transistor and an emitter region 10b and a collector contact region 10c of a substrate PNP transistor are formed through a pattern oxide film 9 at the same time. Then a silicon nitride film 11 is formed on the entire surface by, e.g., an LPCVD method. Then, the silicon nitride film 11 and the pattern oxide film 9 beneath the film 11 are all selectively etched at a part other than the parts on the outer base region of the NPN transistor, on the gate of an N-channel MOS transistor and on the emitter region and the collector contact regions of the substrate PNP transistor. Thereafter, a second polycrystalline silicon film 12 is formed. Thus the emitter region and the collector contact region of the substrate PNP transistor can be deeply formed directly beneath an electrode lead-out port at high concentration. |
