发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To contrive the improvement in characteristics of heat radiation for the titled device by a method wherein a groove or a concaved part is provided at the prescribed position on the surface of molded resin, and a heat radiation fin is buried therein. CONSTITUTION:The groove 203 is provided in the direction of column of a lead pin 202 almost in the center part on the upper surface of the epoxy resin 201 wherein IC is enveloped, and the heat radiation fin 204 such as Al and the like is adhered to the groove 203. The internally generated heat is also radiated from the fin 204 in addition to a lead pin 202, the device is operated in a stabilized state, a gap is not generated between the resin and the pin, no crack develops in the resin, and high reliability can be secured. The fins may be formed on both sides of the surface of the resin or at the circular concave section and the like.</p>
申请公布号 JPS57211259(A) 申请公布日期 1982.12.25
申请号 JP19810096897 申请日期 1981.06.23
申请人 TOKYO SHIBAURA DENKI KK 发明人 YAMAZAKI IWAO;TAKEO SHIGEKI;SHIMIZU YOSHIO
分类号 H01L23/34;H01L23/28;H01L23/433 主分类号 H01L23/34
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