| 摘要 |
PURPOSE:To obtain a single crystal semiconductor film with less defects without waste, by heating the surface after forming an insulating film whereon a window is opened in arbitrary shape on the surface of a single crystal semicondutor substrate to adhere an amorphous or polycrystalline semiconductor film over the entire surface. CONSTITUTION:The SiO2 film 12 whereon a window is opened in arbitrary shapes is formed on the single crystal Si substrate 11 with an amorphous Si film 13 formed over the entire surface by a vacuum evaporation or chemical evaporation methods. Next, it is installed on a carbon heater 1 heated to 1,200 deg.C scanned by a scanning type carbon heater 3 with width 2mm. thereover. This scanning fuses the amorphous Si film 13 up to approx. 1,400 deg.C to a single crystal film. The use of an insulating film provided with opened window in arbitrary figures allows providing e.g. window opened-parts on element isolating regions. Therefore, wastes due to figure formation are eliminated resulting in the design and manufacture of a semicondutor device to satisfy the desired purpose. |
