| 摘要 |
PURPOSE:To prevent short-circuit of a second-layer wiring and that between first- and second-layer wirings, by a method wherein the dimensions of the horizontal sections of an alloy layer are made desired and consequently of nonuniform values. CONSTITUTION:A GaAs single crystal active layer 9 is epitaxially grown on a GaAs substrate 1, and then, the layer 9 is removed from regions except for those for forming elements. A TiW alloy layer 10 is formed on the whole surface of the substrate 1. After a photoresist layer 11 is provided by means of spin-coating, a resist mask is formed by means of lithography. A reactive plasma etching is carried out by employing CF4 as a reactive gas. Then, the layer 10 is shaped so as to have an inverted-trapezoid section. After the resist 11 is removed, a second photoresist layer is provided, and openings for forming source and drain electrodes are formed therein. Then, a source electrode 12 and a drain electrode 13 are formed all over the surface of the substrate 1. |
