| 摘要 |
PURPOSE:To avoid the change of the impurity concentration of a substrate by a method wherein a first epitaxial layer is grown onto the substrate, a region functioning as a collector is diffused and formed to the epitaxial layer, a second epitaxial layer is grown onto the whole surface, and the collector region is extended to the second epitaxial layer through heat treatment when preparing the IC containing vertical type transistor. CONSTITUTION:An N<+> type buried layer 12 is shaped to the transistor forming prearranged region of a P type semiconductor substrate 1 through the diffusion of Sb, and a first N type epitaxial layer 13a is grown onto the whole surface containing the layer 12. An SiO2 film 10 is shaped through the oxidation of the surface and a hole is bored while being made correspond to the layer 12, the whole surface is coated with an SiO2 film 11 containing B and B in the film 11 is diffused through heat treatment in the atmosphere of N2, etc., and the P<+> type region 14' afterward serving as a collector is formed into the layer 13a. The films 10, 11 are removed, an N type layer 13b is grown on the whole surface of the layer 13b through heat treatment and a P type emitter region 16 in the region 15 and a P<+> type collector contact region 17 are molded into the region 14 through a normal method. |
