| 摘要 |
PURPOSE:To obtain electrode wiring directly contacting while simplifying a process by a method wherein a semiconductor substrate is coated with a high- melting point metallic layer through a gate insulating film, an opening is formed and ions are implanted in the substrate and a predetermined element region is shaped, and a high-melting point metallic silicide layer is mounted to the region. CONSTITUTION:A thick field oxide film 33 is formed to the peripheral section of a P type Si substrate 31 while using a P<+> type channel stopper layer 32 as an underlay, and the substrate 31 surrounded by the film 33 is coated with a thin gate oxide film 34. An Mo film 36 is shaped onto the whole surface containing the film 34 and coated with an Si3N4 film 38, and a contacting section (d) with wiring between elements is removed to expose the surface of the substrate 31. The Mo film 36G of a section functioning as a gate electrode and a Mo film 36C serving as a wiring are left and others are removed, the N<+> type ions are implanted while using a source S and a drain D and the Mo film directly remaining in the connecting section (d) as masks, and the prescribed region is formed. An Mo silicide 40 is attached to the section (d), and employed as the electrode wiring directly contacting with the element region. |
