| 摘要 |
PURPOSE:To obtain the semiconductor device in which contact between a semiconductor and a metal is stable even in succeeding heat treatment at a high temperature by forming a high-melting point metal nitride layer functioning as wiring or one part of an electrode to a section directly contacting with the semiconductor and thermally treating the surface at the high temperature of 700 deg.C or higher. CONSTITUTION:An N type layer 12 is grown onto a high-resistant Si substrate 11 in epitaxial form, and an Mo nitride layer 13 is shaped through reactive sputtering in a mixed atmohphere, the ratio of N2 to Ar therein is made 1:2. The introduction of N2 is stopped, an Mo layer 14 is deposited onto the layer 13 through the second sputtering in the atmosphere only of Ar, and the laminate of the layers 14, 13 with form smaller than an etching film 15 is left under the etching film while using the Si3N4 film 15 with predetermined shape as a mask. The film 15 is removed, N type impurity ions are injected while employing the laminate as a mask, and injection regions 16 are formed to the source and drain forming regions of the layers 12 at the both sides. The regions 16 are activated through heat treatment at 700 deg.C or higher for approximately twenty min. in N2 atmosphere. |
