| 摘要 |
PURPOSE:To obtain a stable electrical connection and to surely perform spot matching, by forming a connection pattern by forming a conductor pattern and a detector pattern with the same exposure mask and by installing openings. CONSTITUTION:An aluminium film (containing 4% Cu) having 3,000Angstrom thickness is sputtered on a substrate as a conductor film and areas for forming detector are subjected to ion etching. Then, ''Permalloy '' is vapor-deposited to have 300Angstrom thickness as a soft magnetic film for making detector by an electron bean without removing any resist. Conductor patterns and detector patterns are formed by ion etching with a 20 deg. incident angle of ion beam by using a 0.6mum thick photo-resist AZ1350J film as a mask. An SiO2 film is sputtered to a 4,000Angstrom thickness as an insulating film and the surface is coated with a 4,500Angstrom thick ''Permalloy '' film. The ''Permalloy '' film is used for transferring bubbles. Then, openings 8 and electrodes for bonding to be used for bonding the conductor patterns are formed. |
