发明名称 |
Semiconductor circuit. |
摘要 |
<p>A semiconductor circuit has a power source terminal (VD) set at a positive potential, a reference potential terminal (VS) set at a reference potential, a first MOS transistor whose current path is connected between the power source terminal (VD) and an output terminal (VO), and a second MOS transistor whose current path is connected between the output terminal (VO) and the reference potential terminal (VS). The gates of the first and second MOS transistors are commonly connected to an input terminal. The first and second MOS transistors are respectively n- and p-channel MOS transistors (TN10, TP10).</p> |
申请公布号 |
EP0066980(A1) |
申请公布日期 |
1982.12.15 |
申请号 |
EP19820302516 |
申请日期 |
1982.05.18 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
HIDEHARU, EGAWA;YASOJI, SUZUKI |
分类号 |
H01L27/092;H01L27/12;H03K19/0948;(IPC1-7):01L27/12 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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