| 摘要 |
PURPOSE:To perform development and etching precisely with high operation efficiency by etching a substrate by one electrode system after developing photoresist by the other electrode system in the same vacuum chamber. CONSTITUTION:One vacuum chamber 1 for circulating prescribed gas and electrode systems 2 and 3 in said chamber are provided, and after the photoresist film of a sample is developed by one electrode system, a sample substrate is etched by the other electrode system. Since an external voltage is applied between the electrodes or an electrode and the sample so as to control the plasma potential and ionic energy of one electrode system, the development and etching are carried out in the same vacuum chamber, and the thermal deformation of the sample is reduced because of precise temperature control over the sample; and work precision is improved, and the operation is carried out with high efficiency. |
