| 摘要 |
The method ionises a tarket material by discharging cathode and bias power in a large capacity vacuum vessel inserting reaction gas and disposing ionization electrode and target and base material to connect with cathode and bias power respectively, and forms a dense film bonded strongly on the surface of the base material by increasing subvoltage with the base material. Uniformly distributed multipoles are disposed on the whole circumference of the vessel to form the minimum uniform magnetic field in the vacuum vessel, and generating ion constraint with high density in the boundary of the minimum uniform magnectic field.
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