| 摘要 |
PURPOSE:To make the high speed pull-up possible at a speed twice the ordinary speed by immersing the lower end of a capillary into a semiconductor solution conducting it to the upper end by the capillary action forming a P-N junction in a ribbon crystal which is grown continuously and performing low temperature treatment before electrodes are attached. CONSTITUTION:The lower end of a capillary is immersed in semiconductor solution, and a ribbon crystal which is continued from the top end by capillary phenomenon. Then, surface treatment or light chemical etching is performed on a P- type ribbon crystal 11 obtained by said method. A P-N junction 13, on the surface layer portion of which an N<+>-layer 12 is diffused and formed, is yielded. Thereafter, the junction 13 on one side is remained, and the junction 13 on the other side is etched out. Then, heat treatment is performed in inactive gas such as N2 at 650-850 deg.C for 5min or more. Thereafter, grid shaped positive electrodes 14 are formed on the layer 12 which is to become a light receiving plane, and a negative electrode 15 is formed on the P-type layer 11 on the bottom surface, thereby a solar cell is formed. In this method, since the completeness of the crystal can be restored, the pull-up speed can made fast. |
