| 摘要 |
PURPOSE:To flatten the whole surface of the semiconductor of the uppermost layer by alternately forming the first semiconductor layers, the speed of growth thereof in a groove section is faster, and the second semiconductor layers different from the first semiconductor layers successively onto a substrate with the groove. CONSTITUTION:An InP layer 3 is grown onto the InP substrate 1 with the groove 2 in epitaxial form, the InGaAsP layer 4, the speed of growth thereof in the groove section is faster than a flat section, is grown, an InP layer 7 and the InGaAsP layer 8 are grown successively onto the layer 4 in epitaxial form, and the plane of the uppermost layer 8 is flattened. Accordingly, the semiconductor layers with flat surfaces in which slits are not shaped can be grown onto the substrate with the groove. |
