发明名称 Multi-layered metallized silicon matrix substrate
摘要 A multi-layer metallized substrate comprises a matrix of sintered silicon particles joined by a thin insulating layer of silicon dioxide or silicon nitride. Semiconductor circuit chips are bonded to the surface of the substrate to form an electrically connected, unitary integrated circuit module structure.
申请公布号 US4364100(A) 申请公布日期 1982.12.14
申请号 US19800143216 申请日期 1980.04.24
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 EDMONDS, HAROLD D.;MARKOVITS, GARY
分类号 H05K3/46;H01B3/12;H01L23/15;H01L23/538;H05K1/03;(IPC1-7):H05K1/03 主分类号 H05K3/46
代理机构 代理人
主权项
地址