发明名称 |
Multi-layered metallized silicon matrix substrate |
摘要 |
A multi-layer metallized substrate comprises a matrix of sintered silicon particles joined by a thin insulating layer of silicon dioxide or silicon nitride. Semiconductor circuit chips are bonded to the surface of the substrate to form an electrically connected, unitary integrated circuit module structure. |
申请公布号 |
US4364100(A) |
申请公布日期 |
1982.12.14 |
申请号 |
US19800143216 |
申请日期 |
1980.04.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
EDMONDS, HAROLD D.;MARKOVITS, GARY |
分类号 |
H05K3/46;H01B3/12;H01L23/15;H01L23/538;H05K1/03;(IPC1-7):H05K1/03 |
主分类号 |
H05K3/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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