| 摘要 |
PURPOSE:To obtain a silicon semiconductor device having no crystalline defect by setting the crystal defect density in the section of a single crystal semiconductor device in a range of 7X10<3>cm<-2> to 5X10<4>cm<-2>. CONSTITUTION:When the defect density of the section of a silicon single crystal wafer exceeds 5X10<4>cm<-2>, many laminar defects (line defects) are produced, while when the density becomes less than 7X10<3>cm<-2>, may ultrafine defects are produced. On the other hand, the density of the crystal defects in the section of the silicon single crystal substrate is varied even by the various conditions (e.g., oxygen density, or final heat treatment) of the silicon single crystal substrate. Accordingly, the crystal defect density of the section is most adapted in the range of 7X10<3>cm<-2>-5X10<4>cm<-2>. |
