INSPECTON OF SEMICONDUCTOR MANUFACTURING PROCESS

摘要

PURPOSE:To inspect the normalization of heat treatment by a method wherein the recombination characteristics of minor carriers of Si single crystal is measured by a light attenuation method after heat treatment for intrinsic gettering and the presence or absence of the attenuation characteristics of two kinds or more is utilized. CONSTITUTION:Optical pulses are aimed at Si single crystal before heat treatment for intrinsic gettering and the time change of mu-wave detection output is observed. When no crystal defect exists, the attenuation curve is e<-t/gamma> to decide life tau. The attenuation curve after heat treatment promptly damps at the initial stage by corresponding to a decrease in the life of minor carriers and then the curve is gradual and becomes the attenuation corresponding to long time constant. The above is caused because of the existence of a defect at the inside and the existence of the fast recombination center of minor carriers and slow recombination center by deep level. The attenuation curve can not be indicated by single e<-t/gamma> . The formation of a no defective region after heat treatment and the occurrence of internal defect can be inspected by nondestruction by the use of a variation in attenuation characteristics.