| 摘要 |
PURPOSE:To prevent the lowering of dielectric resistance even when the surface of a chip is coated with resin by forming an independent electrode onto a silicon oxide film on the extension of the outer circumferential section of a PN coupling in floating shape. CONSTITUTION:The silicon oxide film 2 is formed to the surface of a silicon substrate 1, a selective diffusion layer 3 is shaped, an electrode 6 is molded while the electrode 7 separated from the electrode 6 is formed on the extension of the outer circumferential section of the P-N junction 5, and the electrode 7 is floated. Since the electrode separated from the electrode of the selective diffusion layer on the silicon oxide film on the extension of the outer circumferential section of the P-N junction is used under a floating condition, a special lead terminal need not be mounted, and dielectric resistance can easily be increased. |
