发明名称 PLASMA VAPOR PHASE METHOD
摘要 PURPOSE:To form a compound consisting of III and V group elements in the periodic table on a substrate heated to a low temp. by introducing a reactive gas contg. the III group element and a reactive gas contg. the V group element into a plasma atmosphere to chemically decompose and react them. CONSTITUTION:A substrate 1 is set on an electrode 2 for generating plasma by high frequency or DC discharge and heated to <=500 deg.C with a heater 5. Other electrode (anode)3 is provided with nozzles 11 for spouting reactive gases. A reactor 8 is evacuated by suction from the exhaust port 7, a bubbler 12 is filled with a reactive gas which is metallic org. substance contg. a III group element, and the gas is introduced into the nozzles 11 with a carrier gas 16 through a flowmeter 13. A reactive gas contg. a V group element such as NH3 or PH3 is introduced into the nozzles 11 from a duct 7 through a flowmeter 14, a carrier gas is also introduced from a duct 18 through a flowmeter 15, and the gases are spouted in the direction of arrows 9. The reactive gases are reacted in the plasma atmosphere 10 between the electrodes 2, 3 to form a film of a compound such as BP or BN on the substrate 1.
申请公布号 JPS57196710(A) 申请公布日期 1982.12.02
申请号 JP19810078849 申请日期 1981.05.25
申请人 HANDOUTAI ENERUGII KENKYUSHO:KK 发明人 YAMAZAKI SHIYUNPEI
分类号 C03C17/22;C01B21/064;C01B25/08;C23C16/30;C23C16/34;C23C16/38;C23C16/50;C30B25/02;C30B29/40 主分类号 C03C17/22
代理机构 代理人
主权项
地址