摘要 |
PURPOSE:To form a compound consisting of III and V group elements in the periodic table on a substrate heated to a low temp. by introducing a reactive gas contg. the III group element and a reactive gas contg. the V group element into a plasma atmosphere to chemically decompose and react them. CONSTITUTION:A substrate 1 is set on an electrode 2 for generating plasma by high frequency or DC discharge and heated to <=500 deg.C with a heater 5. Other electrode (anode)3 is provided with nozzles 11 for spouting reactive gases. A reactor 8 is evacuated by suction from the exhaust port 7, a bubbler 12 is filled with a reactive gas which is metallic org. substance contg. a III group element, and the gas is introduced into the nozzles 11 with a carrier gas 16 through a flowmeter 13. A reactive gas contg. a V group element such as NH3 or PH3 is introduced into the nozzles 11 from a duct 7 through a flowmeter 14, a carrier gas is also introduced from a duct 18 through a flowmeter 15, and the gases are spouted in the direction of arrows 9. The reactive gases are reacted in the plasma atmosphere 10 between the electrodes 2, 3 to form a film of a compound such as BP or BN on the substrate 1. |