摘要 |
<p>PURPOSE:To facilitate control over I<2>L elements constituting a storage device, and to improve the efficiency of utilization of a semiconductor substrate per unit area, and controlling currents supplied to the I<2>L elements. CONSTITUTION:When H-level address signals are inputted to input terminals X1 and Y1, transistors (TR) T1 and T5 turn on, the base of a TR T3 is held at a level L, and an output terminal S1 is held at a level H. When an L-level address signal is inputted to the input terminal X1, the TR T1 turns off, but since the H-level address signal is inputted to the input terminal Y1, the TR T3 turns off, holding the output terminal S1 at the level H. When L-level address signals are inputted to the terminals X1 and Y1, the TRs T1 and T5 turn off, and a current A2 is supplied to the TR T3, which turns on, thereby holding the output terminal S1 at the level L.</p> |