| 摘要 |
PURPOSE:To make crystal particles of a polycrystalline layer larger and obtain a high quality island-like single crystal on amorphous substance by a method wherein a thin polycrystalline silicon layer is formed on the amorphous substance beforehand and grain sizes are made larger by laser annealing. CONSTITUTION:An SiO2 film 10 is formed on a semiconductor substrate 14 and a thin polycrystalline Si layer 12 is deposited on the film 10. The polycrystalline Si layer 12 is melted by a laser 20 and the grain sizes are made larger, so that a polycrystalline Si layer 13 which contains single crystal is formed. Then an epitaxial growth layer 15 is formed on the layer 13 and an Si3N4 film 17 is formed. The Si3N4 film 17 and the polycrystalline silicon layer 15 are etched using a resistor layer 30. After the resistor 30 is removed a such composition that the Si island 15 is surrounded by the oxide film 10 is taken by using the film 17 as a mask. After the film 17 is removed, the Si island 15 is converted into the single crystal Si island 16 by laser annealing. |
