| 摘要 |
PURPOSE:To obtain a semiconductor device having uniform characteristics even at any part of its semiconductor substrate by preventing a gettering impurity from immersing from the peripheral side surface of the substrate. CONSTITUTION:An Si substrate 1 is covered with a mask SiO2 12 for gettering impurity. A resist 13 is covered on the parts of a main surface 1a, a peripheral side surface 1c and the width W1 of the periphery of the main surface 1b, and a window 13a is formed. A window 12a having several microns of a width W2 is formed by etching, a P type layer 14 is, for example, formed, and an Si3N4 15, and a polysilicon 16 are selectively laminated on the main surface 1b to complete it. When an external diffusion is prevented via the films 15 and 16 after a gettering impurity layer is formed only at the center, a heat treatment is performed and a gettering operation is executed according to this structure, the substrate 1 can exhibits uniform characteristics at the respective parts. |
