| 摘要 |
PURPOSE:To obtain a sensitive body having high dark resistivity by decomposing a gas contg. C2H2 and Si in a prescribed ratio and a gas for forming amorphous silicon carbide (a-SiC) contg. a prescribed amount of a group Va element of the periodic table by glow discharge to form a negatively chargeable layer on a substrate. CONSTITUTION:A first layered region 6 and a second layered region 7 are successively formed on an electrically conductive substrate 1 in the form of an integrated photoconductive a-SiC layer 5a. In order to form the a-SiC layer 5a, a gas contg. C2H2 and Si in 0.01:1-3:1 ratio is used. The second region 7 contains 0-10,000ppm, preferably 0-1,000ppm group Va element, so the resulting sensitive body is negatively chargeable and required electrophotographic characteristics such as surface potential and photosensitivity are obtd. Since the first region 6 contg. a larger amount of the group Va element than the second region 7 is formed, the conductivity of the a-SiC layer 5a is increased in the substrate side region, the injection of carriers is hindered and light carriers generated in the layer 5a flow smoothly to the substrate 1. |
