| 摘要 |
PURPOSE:To easily provide an insulating film with openings by a method wherein thin wires are run to form a mask and the insulating film is formed. CONSTITUTION:Thin metal wires 2 having a diameter corresponding to the width of a finally provided P region are arranged in parallel at required intervals on an N-type GaAs 1 and an Si3N4 film 3 is formed on the whole surface of the N type GaAs 1 by a CVD method. Banded holes 3a are generated after removing the wires 2. Clear holes 3a are formed by applying light etching to the holes 3a and by removing the thin insulating film at recessed edge sections 3b. The wires 2 can be formed with uniformity and sufficient thinness up to on the order of mum. Therefore, openings 3a can also be formed with similar high accuracy. The manufacturing method can be applied to the manufacture of the semiconductors of every kind and a process is simple and productivity is improved. |
