| 摘要 |
PURPOSE:To make the low withstand voltage junction part to operate normally, and to prevent the production of lateral transistor to apply influence to the other element at a semiconductor integrated circuit device by a method wherein the low withstand voltage P-N junction part for generation of the reference voltage mentioned above is surrounded with the high withstand voltage high potential P-N junction parts. CONSTITUTION:N<+> type diffusion regions 18 are formed as to surround the low withstand voltage P-N junction part of a Zener diode 2, and the p<+> type ion implantation regions 19 having lower concentration then the P<++> type high concentration regions 17 are formed adjoining thereto in the regions 18 thereof. Accordingly the regions 18 can be applied with high potential because the regions thereof can form the P-N junctions having the higher withstand voltage than the region 16. Namely because the low withst and voltage P-N junction part of the diode 2 is surrounded with the P-N junctions having the high withstand voltage and high potential formed by the regions 18 and the regions 19, even when a current tends to flow in the lateral direction between the region 16 and the earthed N<+> type region 20 being at the adjoining position, the current is pushed toward the depth direction of the substrate 5 by high electric field at the high withstand voltage junction part, the rate to reach the region 20 is remarkably reduced. |
