| 摘要 |
PURPOSE:To reduce the resistance of a diffusion layer while preventing the roughing of the surface by using simple substnace antimony and antimony oxide as the impurity sources of an antimony impurity layer. CONSTITUTION:The first heating section 9 and the second heating section 10 are mounted to the impurity source heating region 6 of a diffusion oven body D, the third heating section 8 is set up to a diffusion region 7 and the heating sections 8, 9, 10 can be temperature-controlled independently. Silicon wafers W are arranged into the diffusion region 7, and antimony trioxide and simple substance antimony as the impurity sources are entered into separate boats, and each disposed to the first and second heating sections 9, 10. Antimony evaporated and a carrier gas are moved to the diffusion section 7, and diffused to the wafers W. Accordingly, the resistance of the diffusion layer can be reduced by using simple substnace antimony, and the surface is not roughened as seen in the case when using only simple substance antimony. |
