Thyristor having gate-controlled MISFET structures of the depletion type and method of operating it

摘要

Emitter short-circuit paths (10, 9, 7, 5) extend over the gate-controlled MISFET structures (M1, M2) of a thyristor. Underneath these paths there are stabilising short circuits which are inactivated only during the triggering process and turn-off short circuits which are activated only during the turn-off process. A simple thyristor design having MISFET structures which can be produced in a standard fashion is required. According to the invention, only normally-on structures which are differently triggered are provided. The field of application is in power semiconductor technology. <IMAGE>