| 摘要 |
PURPOSE:To obtain a device which has less offset drift without increasing the height of a pedestal, by making the shape of the sticking end surface of the pedestal to a semiconductor diaphragm smaller than that to a fitting base. CONSTITUTION:The shape of the sticking end surface of a pedestal to a semiconductor diaphragm is smaller than to a fitting base. The pedestal 12 made of, for example, silicon single crystal is stuck to a silicon diaphragm by a square plate 12a which has nearly the same sectional shape with the main surface of the silicon diaphragm 1. The pedestal 12 has a columnar part 12b with a smaller diameter phid2 than the diameter phid1 of the circumcircle of the silicon diaphragm 1 at the end surface side where the pedestal is stuck to a metallic stem 3. Consequently, the influence of thermal stress due to the difference in coefficient of linear expansion between the pedestal 12 and metallic stem 3 upon the silicon diaphragm 1 is reduced. |
