| 摘要 |
A multi-current technique for offset reduction in Hall elements is extended in order to separate a piezoresistive voltage, from a Hall voltage, in similar Hall and piezoresistive devices based on a semiconductor such as, for example, Silicon. In a special embodiment, this offset compensation method exploilts directional averaging using biaxial, quadruple current injection from four electrically separate current sources, in order to obtain in-situ cancellation of the off-diagonal piezoresistive voltage that is generated across Hall voltage contacts upon the application of simple shear stress. The technique indicates the possibility of Si-based Hall elements with field-equivalent offsets well below 1milliTesla, even in devices based on (001) Silicon with current injection in the [110] type directions. Simple methods for realizing multiple sources are also discussed, some of which are based on photovoltaic effects.
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