| 摘要 |
PURPOSE:To improve sensitivity by consisting an electric charge transfer layer of a semiconductor region which is composed basically of silicon and is partly finely crystallized and consisting an electric charge generating layer by laminating semiconductor layers which are composed basically of silicon and are partly finely crystallized and one of which contains carbon. CONSTITUTION:A barrier layer 12 is formed on the surface of a conductive base 11 constituted of an aluminum drum. A photoconductive layer 13 constituted of the charge transfer layer 12 and the charge generating layer 22 having superlattice structure is formed on the barrier layer 12. A surface layer 14 is formed on the photoconductive layer 13. The charge generating layer 22 is constituted by alternately laminating thin microcrystalline silicon (muc-Si) and thin carbon-contg. microcrystalline silicon (referred to as muc-Si:C) films 31, 32 respectively having 30-500A film thicknesses. The charge transfer layer 21 can be formed of; for example, muc-Si and muc-Si:C, etc. Hydrogen is preferably added to muc-Si and muc-Si:C at a ratio of 0.01-30atom%, more preferably 1-25atom%. |
