| 摘要 |
PURPOSE:To expand the response wave length by a method wherein, when the photo absorbing layer and the window layer located on the photoabsorbing layer are provided on the InP substrate, the photoabsorbing layer is formed by InGaAs or InGaAsP while the window layer is formed by a mixed crystal including Al. CONSTITUTION:The InGaAs or InGaAsP photoabsorbing layer 2 is epitaxially grown on the N type InP substrate 1 and the N type window layer 3 is likewise epitaxially grown on said layer 2. At this time, AlxGa1-xAsySb1-y (0.4<x<=0.4< y<0.7 or AlxIn1-xAsySb1-y (0.4<x<=1, 0.5<y<=1) are used as the layer 3 or Alx In1-xPySb1-y (0.4<x<=1, 0.3<y<0.5), AlxGa1-xPySb1-y (0.3<x<=1, 0.3<y<0.4) are used. Then the P type layer 4 is formed in the layer 3 by means of the ion implantation making use of the P-N joint between the layer 4 and 3 and the negative electrode 5 is fixed on the end of the layer 4 while the positive electrode 6 is formed on the backside end of the substrate 1. |
