| 摘要 |
PURPOSE:To obtain the method of using a ZnSe single crystal thin film formed through MBE as a blue light emission semiconductor device by a method wherein the carrier density of doped Ga is set at a value lower than the value at which a maximum blue light emission intensity is produced. CONSTITUTION:By controlling the temperatures of a substrate 7 and each of the cells 2a-2c of an apparatus through the method for beam epitaxial growth (MBE) and properly opening and closing each of its shutters 4a-4c, a ZnSe monocrystal thin film 11 grows on the GaAs substrate 7. At this time, if the doping of Ga as impurities is carried out by opening the third shutter 4c, the luminance of blue light emitted will change relying on the temperature of the Ga cell and also conform to the carrier density very well. In other words, almost pure blue light emission is available with the carrier density of Ga in the thin film 11 at a value lower than the value which brings the maximum value for blue light emission intensity. The carrier density is set at 3X10<17> or lower. |
