TUNNEL INJECTION TYPE TRAVELLING TIME EFFECT SEMICONDUCTOR DEVICE

摘要

PURPOSE:To obtain the device operating at ultrahigh speed by forming an electrode for control to a tunnel injection type travelling time effect negative resistance element. CONSTITUTION:Carriers are tunnel-injected into an N<+> layer 2 stacked onto a P<++> source 1, and an N layer 3 is made travel. An N<+> drain 6 is further stacked, and electrode 7, 8 are attached. The gate electrodes 5 are shaped through insulating films 4, and the distribution of potential of the layer 3 is controlled. The impurity concentration of the N<+> layer 2 and the N layer 3 is increased when the space of the gates 5, 5 is shorter and the space of the source 1 and the drain 6 is shorter. The space of the gates is made approximately 2mum-1,000Angstrom , and the thickness of the layer 2 is thinned in an extent that tunnel injection is sufficiently generated. When the travelling time of the carriers can be ignored, the layer 3 shows negative resistance when the angle of travelling theta=pifW/v is selected in pi layer 1 and the N<+> layer 6 are also thinned, and series resistance and thermal resistance are lowered. In this constitution, operating voltage is low because tunnel injection is used, oscillating frequency is high because an operating layer is thin, and the device generating small noises is obtained.