| 摘要 |
PURPOSE:To obtain a high-dielectric strength transistor, the rate of amplification thereof is high and which functions at high speed and can be controlled by light, by forming a reverse conduction type reticulate or latticed layer into a collector layer in parallel with a collector-base junction surface. CONSTITUTION:P<+> layer 3 are diffused to an Si substrate obtained by forming an N<+> layer at one side of an N layer in reticulate or latticed shape, an N epitaxial layer is stacked, and a P<+> layer 4 from the surface is connected to the P<+> layers 3. A P base layer and further an N<+> emitter layer are shaped to the N layer surrounded by the P<+> layer 4, electrodes B, E, C are attached, and the electrode of the P<+> layer 4 is conected to the electrode E. According to this constitution, since high dielectric resistance is obtained owing to the generation of a pinch-off condition due to reverse bias among the P<+> layers 3 and a P collector layer and a collector junction can be shallowed, the device can be conducted through the irradiation of beams in place of base currents, and an optical transistor having not less 1,000V dielectric strength is obtained. The rate of amplification can also be improved and speed can also be increased because base width can be thinned. |
