| 摘要 |
PURPOSE:To obtain a high-quality X-ray exposure mask with high yield, by providing an aperture to a spacer thick film by using an auxiliary thin film formed between a base thin film and a spacer thick film as a stopper and removing the auxiliary thin film at the aperture part prior to the electroplating. CONSTITUTION:An X-ray transmitting supporter layer (silicon nitride film) 2 is formed on a mask supporter (silicon single crystal substrate) 1. A base thin film (gold film) 3 for electroplating is formed on the layer 2, and an auxiliary thin film (chrome film) 41 is coated on the film 3. Furthermore a spacer thick film (polyimide resin film) 4 is formed on the film 41, and an etching mask is formed on the film 4. Then the oxygen ion beam is irradiated 5 on the entire surface of the etching mask. Thus the film 4 is etched at the area irradiated by the ion beam, and an aperture 6 is formed. The film 41 is removed by an etching solution of the cerium nitrate (II) ammonium group and by using the film 4 as a mask. Thus the gold of the film 3 is partially exposed, and the electroplating is carried out by using the film 3 as an electrode to from an X-ray absorber pattern 7. Then the film 4 and then the film 41 are removed to obtain the titled mask. |
